vs-16tts08fp-m3, VS-16TTS12FP-M3 www.vishay.com vishay semiconductors revision: 24-aug-17 1 document number: 96299 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage phase control thyristor, 16 a features ? designed and qualified for industrial level ? fully isolated package (v ins = 2500 v rms ) ? ul pending ? 125 c max. operating junction temperature ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? typical usage is in input rectification crowbar (soft start) and ac switch in motor contro l, ups, welding, and battery charge description the vs-16tts..fp... high voltag e series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. primary characteristics i t(av) 10 a v drm /v rrm 800 v, 1200 v v tm 1.4 v i gt 60 ma t j -40 c to 125 c package 3l to-220 fullpak circuit configuration single scr ( g ) 3 2 (a) 1 (k) 3 l to-220 fullpak output current in typical applications applications single-phase bridge three-phase bridge units capacitive input filter t a = 55 c, t j = 125 c, common heatsink ? of 1 c/w 13.5 17 a major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 10 a i rms 16 v drm /v rrm 800, 1200 v i tsm 200 a v t 10 a, t j = 25 c 1.4 v dv/dt 500 v/s di/dt 150 a/s t j range -40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma vs-16tts08fp-m3 800 800 10 VS-16TTS12FP-M3 1200 1200
vs-16tts08fp-m3, VS-16TTS12FP-M3 www.vishay.com vishay semiconductors revision: 24-aug-17 2 document number: 96299 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units typ. max. maximum average on-state current i t(av) t c = 70 c, 180 conduction, half sine wave 10 a maximum rms on-state current i rms 16 maximum peak, one-cycle, ? non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied 170 10 ms sine pulse, no voltage reapplied 200 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 144 a 2 s 10 ms sine pulse, no voltage reapplied 200 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 2000 a 2 ? s maximum on-state voltage drop v tm 10 a, t j = 25 c 1.4 v on-state slope resistance r t t j = 125 c 24.0 m ? threshold voltage v t(to) 1.1 v maximum reverse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 holding current i h anode supply = 6 v, resistive load, initial i t = 1 a ? 16tts08fp, 16tts12fp , t j = 25 c - 150 maximum latching current i l anode supply = 6 v, resistive load, t j = 25 c 200 maximum rate of rise of off-state voltage dv/dt t j = t j max., linear to 80 %, v drm = r g - k = open 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positive gate current + i gm 1.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = -10 c 90 ma anode supply = 6 v, resistive load, t j = 25 c 60 anode supply = 6 v, resistive load, t j = 125 c 35 maximum required dc gate ? voltage to trigger v gt anode supply = 6 v, resistive load, t j = -10 c 3.0 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate voltage not to trigger v gd t j = 125 c, v drm = rated value 0.25 maximum dc gate current not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical reverse recovery time t rr t j = 125 c 4 typical turn-off time t q 110
vs-16tts08fp-m3, VS-16TTS12FP-M3 www.vishay.com vishay semiconductors revision: 24-aug-17 3 document number: 96299 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current ra ting characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to +125 c maximum thermal resistance, ? junction to case r thjc dc operation 2.5 c/w maximum thermal resistance, ? junction to ambient r thja 62 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth, and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style 3l to-220 fullpak 16tts08fp 16tts12fp maximum allowable casetemperature (c) avera g e on- s tate current (a) 0 2 4 6 8 10 12 40 60 80 100 120 140 30 120 180 90 60 maximum allowable casetemperature (c) avera g e on- s tate current (a) 0 2 4 6 8 10 12 14 16 18 20 40 60 80 100 120 140 30 60 180 dc 120 90 maximum avera g e on- s tate power loss (w) avera g e on- s tate current (a) 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 rm s limit conduction angle 180 120 90 60 30 t j = 125 c maximum avera g e on- s tate power loss (w) avera g e on- s tate current (a) 0 5 10 15 20 25 0 4 8 12 16 dc 180 120 90 60 30 rm s limit conduction period t j = 125 c
vs-16tts08fp-m3, VS-16TTS12FP-M3 www.vishay.com vishay semiconductors revision: 24-aug-17 4 document number: 96299 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics number of equal amplitude half cycle current pulses (n) 80 100 120 140 160 180 1 10 100 peak half s ine wave on- s tate current (a) at any rated load condition and with rated v rrm applied following s urge. initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s pulse train duration (s) peak half s ine wave forward current (a) maximum non-repetitive s urge current v s . pul s e train duration. initial t j = 125 c no voltage reapplied rated v rrm reapplied 1 10 100 1000 0 1 2 3 4 5 t = 25 c j instantaneous on- s tate current (a) instantaneous on- s tate volta g e (v) t = 125 c j s quare wave pulse duration (s) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.01 0.1 1 10 s ingle pul s e (thermal re s i s tance) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01 z thjc - thermal impedance (c/w)
vs-16tts08fp-m3, VS-16TTS12FP-M3 www.vishay.com vishay semiconductors revision: 24-aug-17 5 document number: 96299 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - gate characteristics ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-16tts08fp-m3 50 1000 anti static plastic tubes VS-16TTS12FP-M3 50 1000 anti static plastic tubes links to related documents dimensions www.vishay.com/doc?96155 part marking information www.vishay.com/doc?95456 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) rectangular gate pul s e (4) (3) (2) (1) instantaneous g ate current (a) instantaneous g ate volta g e (v) t j = 25 c t j = 125 c b)recommended load line for v g d i g d fre q uency limited by p g (av) a)recommended load line for rated di/dt: 10 v, 20 tr = 0.5 s , tp >= 6 s <= 30% rated di/dt: 10 v, 65 tr = 1 s , tp >= 6 s (1) p g m = 40 , tp = 1 m s (2) p g m = 20 w, tp = 2 m s (3) p g m = 8 w, tp = 5 m s (4) p g m = 4 w, tp = 10 m s t j = -10 c 2 - current rating, rms value 3 - circuit configuration: 4 - package: 5 6 - voltage code x 100 = v rrm t = single thyristor - type of silicon: t = to-220ab s = converter grade 8 - 08 = 800 v 12 = 1200 v 7 - fullpak device code 6 2 4 3 5 7 8 16 t t s 12 fp -m3 v s - 1 1 - vishay semiconductors product environmental digit: -m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 06-jul-17 1 document number: 96155 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 3l to-220 fullpak dimensions in millimeters notes (1) all dimensions are in mm (2) package body size exclude mold flash and burrs. moldflash should be less than 6 mils expo s ed cu mold fla s h bleeding 1.30 1.05 1.20 1.47 13.56 12.90 3.3 3.1 bottom view 2.80 2.44 10.6 10.0 0.61 0.38 2.85 2.65 3.7 3.2 7.31 6.50 0.9 0.7 2.54 typ. 2.54 typ. 16.0 15.8 5 0.5 5 0.5 4.8 4.6 (2 places) r 0.7 r 0.5 hole ? 3.40 3.10
legal disclaimer notice www.vishay.com vishay revision: 08-feb-17 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. ? 2017 vishay intertechnology, inc. all rights reserved
|
